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Brontek will present a paper describing its unique cathodic arc process for shallow junction doping of boron for semiconductor logic circuits at the 17th International Conference on Ion Implantation Technology (IIT 2008). This biennial conference is the premier world venue for the presentation of the latest advances in all aspects of ion implantation, from the fundamentals of ion-solid interactions to manufacturing applications of the latest machines and systems. The emphasis has traditionally been on semiconductor technology, but other applications for ion implantation, such as treatment of orthopedics devices are often presented as well.

Possible solutions for the “shallow junction doping problem” have been a focus of the industry for some years, and such research will again be a major focus of the Conference this year. The Brontek paper, entitled,

Shallow Junction and Ultra-Shallow Junction Doping by Means of the Cathodic Arc Plasma Generation Technology

was authored by a team from Brontek and HY-Tech Research Corporation, also of Radford, VA. The paper will be presented by Brontek’s Jim Williams at 10:00 AM on Thursday.

The PlasmaArc Implanter is an emerging technology for ion implantation in microelectronics manufacturing. It is designed to fit a critical need in the International Technology Roadmap for Semiconductors (ITRS). This is the need for an ion source that can maintain the current throughput as the ion energies drop below 1000 electron-Volts (eV) to form ultra-shallow junctions (USJ) in the transistors of the next generation integrated circuits. The present focus in on boron (B) ions, because B ion delivery is the main bottleneck in the ITRS.

To see how the PlasmaArc Implanter’s throughput would compare with the state-of-the-art in boron ion delivery, based on current data, click Critical Technology to view downloadable document (pdf).

The patented PlasmaArc Implanter is based on vacuum (cathodic) arc technology. Technical references can be found here.

Brontek’s next-generation ion implantation technology was recently cited by Semiconductor International.

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